TGF2023-05 1 apr 2011 ? rev d triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com datasheet subject to change without notice. primary applications product description key features 25 watt discrete power gan on sic hemt bias conditions: vd = 28 v, idq = 500 ma, vg = -3.6 v typical ? frequency range: dc - 18 ghz ? 43.9 dbm nominal psat at 3 ghz ? 56% maximum pae ? 17.8 db nominal power gain ? bias: vd = 28 - 32 v, idq = 500 ma, vg = -3.6 v typical ? technology: 0.25 um power gan on sic ? chip dimensions: 0.82 x 1.44 x 0.10 mm the triquint TGF2023-05 is a discrete 5.0 mm gan on sic hemt which operates from dc-18 ghz. the TGF2023-05 is designed using triquint?s proven 0.25um gan production process. this process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. the TGF2023-05 typically provides 43.9 dbm of saturated output power with power gain of 17.8 db at 3 ghz. the maximum power added efficiency is 56% which makes the TGF2023-05 appropriate for high efficiency applications. lead-free and rohs compliant . ? defense & aerospace ? broadband wireless
TGF2023-05 2 apr 2011 ? rev d triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table ii recommended operating conditions table i absolute maximum ratings 1 / symbol parameter value vd drain voltage 28 - 32 v idq drain current 500 ma id_drive drain current under rf drive 1500 ma vg gate voltage -3.6 v 1 / these ratings represent the maximum operable val ues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause per manent damage to the device and / or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in table iv. symbol parameter value notes vd drain voltage 40 v 2/ vg gate voltage range -50 to 0 v vdg drain-gate voltage 80 v id drain current 5 a 2/ ig gate current 28 ma pin input continuous wave power 37 dbm 2/ tch channel temperature 200 c
TGF2023-05 3 apr 2011 ? rev d triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii rf characterization table 1 / bias: vd = 28 v, idq = 500 ma, vg = -3.6v typical 1 / values in this table are engineering estimates scaled from measurements on the 1.25 mm gan/sic unit cell (see tgf2023-01 datasheet) 2 / large signal equivalent output network (normalized) (see figure, pg 7) symbol parameter 3 ghz 6 ghz 10 ghz 14 ghz units power tuned: psat saturated output power 43.9 43.2 43.0 41.6 dbm pae power added efficiency 56 56 49 39 % gain power gain 17.8 11.9 9.4 6.1 db efficiency tuned: psat saturated output power 42.6 41.5 42.7 41.6 dbm pae power added efficiency 62 62 51 40 % gain power gain 17.1 12.5 9.7 6.0 db symbol parameter 3 ghz 6 ghz 10 ghz 14 ghz units power tuned: rp 2 / parallel resistance 79.3 81.9 61.5 49.9 ? mm cp 2 / parallel capacitance 0.524 0.348 0.426 0.432 pf/mm efficiency tuned: rp 2 / parallel resistance 153 171 72.1 53.1 ? mm cp 2 / parallel capacitance 0.426 0.372 0.414 0.472 pf/mm
TGF2023-05 4 apr 2011 ? rev d triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iv power dissipation and thermal properties 1 / parameter test conditions value notes maximum power dissipation tbaseplate = 70 oc pd = 32.2 w tchannel = 200 oc tm = 1.5e+6 hrs 2 / thermal resistance, jc vd = 28 v id = 500 ma pd = 14 w tbaseplate = 70 oc jc = 4.0 (oc/w) tchannel = 126 oc tm = 6.4e+8 hrs thermal resistance, jc under rf drive vd = 28 v id = 1540 ma pout = 43.9 dbm pd = 19.0 w tbaseplate = 70 oc jc = 4.0 (oc/w) tchannel = 146 oc tm = 1.0e+8 hrs mounting temperature 30 seconds 320 oc storage temperature -65 to 150 oc 1 / assumes eutectic attach using 1mil thick 80/20 ausn mounted to a 10mil cumo carrier plate 2 / channel operating temperature will directly affect the device median lifetime. for maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels.
TGF2023-05 5 apr 2011 ? rev d triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com median lifetime vs channel temperature
TGF2023-05 6 apr 2011 ? rev d triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com model parameter vd=28v idq=125ma units rg 0.78 rs 0.13 rd 1.28 gm 0.270 s cgs 1.79 pf ri 0.26 cds 0.308 pf rds 123.6 cgd 0.064 pf tau 2.78 ps ls 0.0058 nh lg -0.013 nh ld 0.018 nh rgs 8900 rgd 1730000 linear model for 1.25 mm unit gan cell (ugc) unit gan cell (ugc) reference plane source drain lg rg cdg rd ld rdg gate rgs cgs r i + v i - gm v i rds cds ls rs
TGF2023-05 7 apr 2011 ? rev d triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com complete 5mm gan hemt linear model includes 4 ugc, 5 vias, and 8 bonding pads _load rp, cp gate pads drain pads .s8p file 1 8 2 7 3 5 4 6
TGF2023-05 8 apr 2011 ? rev d triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. mechanical drawing units: millimeters thickness: 0.100 die x,y size tolerance: +/- 0.050 chip edge to bond pad dimensions are shown to center of pad ground is backside of die bond pad #1, #2, #3, #4 vg 0.154 x 0.115 bond pad #5 vd 0.154 x 1.010
TGF2023-05 9 apr 2011 ? rev d triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. assembly notes ordering information component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn (80/20) solder and limit exposure to temperatures above 300 c to 3-4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: ? ball bonding is the preferred inte rconnect technique, except where noted on the assembly diagram. ? force, time, and ultrasonics are critical bonding parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. part eccn package style TGF2023-05 3a001.b.3.b gan on sic die
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